Discrete Semiconductor Products

SQ2389ES-T1_BE3

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MOSFET P-CH 40V 4.1A SOT23-3

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Discrete Semiconductor Products

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MOSFET P-CH 40V 4.1A SOT23-3

Technical Specifications

Parameters and characteristics for this part

Specification	SQ2389ES-T1_BE3

Current - Continuous Drain (Id) @ 25°C	4.1 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	12 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	420 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]	3 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	94 mOhm
Supplier Device Package	SOT-23-3 (TO-236)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Package / Case	Technology	Power Dissipation (Max) [Max]	Grade	Drive Voltage (Max Rds On, Min Rds On)	Qualification	Rds On (Max) @ Id, Vgs	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]
Vishay General Semiconductor - Diodes Division SQ2389ES-T1_BE3	420 pF	Surface Mount	4.1 A	20 V	40 V	2.5 V	SC-59 SOT-23-3 TO-236-3	MOSFET (Metal Oxide)	3 W	Automotive	4.5 V 10 V	AEC-Q101	94 mOhm	P-Channel	12 nC	SOT-23-3 (TO-236)	-55 °C	175 ░C

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General part information

P-Channel 40 V 4.1A (Tc) 3W (Tc) Surface Mount SOT-23-3 (TO-236)

Technical documentation and resources