Discrete Semiconductor Products

VS-60APF02-M3

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DIODE GEN PURP 200V 60A TO247AC

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Discrete Semiconductor Products

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DIODE GEN PURP 200V 60A TO247AC

Technical Specifications

Parameters and characteristics for this part

Specification	VS-60APF02-M3

Current - Average Rectified (Io)	60 A
Current - Reverse Leakage @ Vr	100 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	TO-247-3
Reverse Recovery Time (trr)	180 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-247AC
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	1.3 V

Part	Technology	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Current - Average Rectified (Io)	Package / Case	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Reverse Recovery Time (trr)	Speed
Vishay General Semiconductor - Diodes Division VS-60APF02-M3	Standard	100 µA	200 V	150 °C	-40 °C	Through Hole	60 A	TO-247-3	1.3 V	TO-247AC	180 ns	200 mA 500 ns
Vishay General Semiconductor - Diodes Division VS-60APF02PBF	Standard	100 µA	200 V	150 °C	-40 °C	Through Hole	60 A	TO-247-3	1.3 V	TO-247AC	180 ns	200 mA 500 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	500	$ 6.03

General part information

Diode 200 V 60A Through Hole TO-247AC

Technical documentation and resources