Discrete Semiconductor Products

PJA3411-AU_R1_000A1

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SOT-23, MOSFET

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Discrete Semiconductor Products

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SOT-23, MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	PJA3411-AU_R1_000A1

Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	5.4 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	416 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	1.25 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs [Max]	100 mOhm
Supplier Device Package	SOT-23
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.2 V

Part	Vgs (Max)	Mounting Type	Vgs(th) (Max) @ Id	Package / Case	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	FET Type	Rds On (Max) @ Id, Vgs [Max]	Qualification	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Grade	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]
Panjit International Inc. PJA3411-AU_R1_000A1	12 V	Surface Mount	1.2 V	SC-59 SOT-23-3 TO-236-3	SOT-23	5.4 nC	P-Channel	100 mOhm	AEC-Q101	416 pF	-55 °C	150 °C	Automotive	20 V	1.25 W	1.8 V 4.5 V	MOSFET (Metal Oxide)
Panjit International Inc. PJA3411_R1_00001	12 V	Surface Mount	1.2 V	SC-59 SOT-23-3 TO-236-3	SOT-23		P-Channel	100 mOhm		416 pF	-55 °C	150 °C		20 V	1.25 W	1.8 V 4.5 V	MOSFET (Metal Oxide)	5.4 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 20 V 3.1A (Ta) 1.25W (Ta) Surface Mount SOT-23

Technical documentation and resources