Discrete Semiconductor Products

FCH47N60F

Obsolete

MOSFET N-CH 600V 47A TO247-3

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 600V 47A TO247-3

Technical Specifications

Parameters and characteristics for this part

Specification	FCH47N60F

Current - Continuous Drain (Id) @ 25°C	47 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	270 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	8000 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	417 W
Rds On (Max) @ Id, Vgs	73 mOhm
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Vgs (Max)	Technology	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Package / Case	FET Type	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package
ON Semiconductor FCH47N60F	30 V	MOSFET (Metal Oxide)	270 nC	10 V	73 mOhm	-55 °C	150 °C	5 V	TO-247-3	N-Channel	417 W	600 V	Through Hole	8000 pF	47 A	TO-247-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 47A (Tc) 417W (Tc) Through Hole TO-247-3

Technical documentation and resources