Discrete Semiconductor Products

VS-FC220SA20

Obsolete

MOSFET N-CH 200V 220A SOT-227

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 200V 220A SOT-227

Technical Specifications

Parameters and characteristics for this part

Specification	VS-FC220SA20

Current - Continuous Drain (Id) @ 25°C	220 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	350 nC
Input Capacitance (Ciss) (Max) @ Vds	21000 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-227-4, miniBLOC
Power Dissipation (Max)	789 W
Rds On (Max) @ Id, Vgs	7 mOhm
Supplier Device Package	SOT-227
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5.1 V

Part	Power Dissipation (Max)	Mounting Type	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Technology	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	FET Type	Drain to Source Voltage (Vdss)
Vishay General Semiconductor - Diodes Division VS-FC220SA20	789 W	Chassis Mount	30 V	350 nC	-55 °C	175 ░C	SOT-227	7 mOhm	5.1 V	220 A	MOSFET (Metal Oxide)	21000 pF	10 V	SOT-227-4 miniBLOC	N-Channel	200 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 200 V 220A (Tc) 789W (Tc) Chassis Mount SOT-227

Technical documentation and resources

No documents available