Discrete Semiconductor Products

PJQ5850_R2_00001

NRND

MOSFET 2N-CH 40V 5A/14A 8DFN

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Discrete Semiconductor Products

NRND

MOSFET 2N-CH 40V 5A/14A 8DFN

Technical Specifications

Parameters and characteristics for this part

Specification	PJQ5850_R2_00001

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	5 A
Current - Continuous Drain (Id) @ 25°C	14 A
Drain to Source Voltage (Vdss)	40 V
Gate Charge (Qg) (Max) @ Vgs	4.4 nC
Input Capacitance (Ciss) (Max) @ Vds	425 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power - Max	12 W, 1.7 W
Rds On (Max) @ Id, Vgs	33 mOhm
Supplier Device Package	DFN5060B-8
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

Part	Technology	Supplier Device Package	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Power - Max	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Configuration	Current - Continuous Drain (Id) @ 25°C	Current - Continuous Drain (Id) @ 25°C	Grade	Power - Max [Max]	Qualification
Panjit International Inc. PJQ5850_R2_00001	MOSFET (Metal Oxide)	DFN5060B-8	2.5 V	425 pF	40 V	33 mOhm	1.7 W 12 W	8-PowerTDFN	4.4 nC	150 °C	-55 °C	Surface Mount	2 N-Channel (Dual)	5 A	14 A
Panjit International Inc. PJQ5850-AU_R2_000A1	MOSFET (Metal Oxide)	DFN5060B-8	2.5 V	425 pF	40 V	33 mOhm		8-PowerTDFN	4.4 nC	175 °C	-55 °C	Surface Mount	2 N-Channel (Dual)	5 A	14 A	Automotive	2 W 14.4 W	AEC-Q101

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General part information

Mosfet Array 40V 5A (Ta), 14A (Tc) 1.7W (Ta), 12W (Tc) Surface Mount DFN5060B-8

Technical documentation and resources

No documents available