Specification	NVXK2VR40WXT2

Configuration	6 N-Channel (3-Phase Bridge)
Current - Continuous Drain (Id) @ 25°C	55 A
Drain to Source Voltage (Vdss)	1200 V
Drain to Source Voltage (Vdss)	1.2 kV
FET Feature	Silicon Carbide (SiC)
Gate Charge (Qg) (Max) @ Vgs [Max]	106 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1789 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	36.8 mm
Package / Case	32-PowerDIP Module
Package / Case	1.449 in
Power - Max [Max]	319 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	59 mOhm
Supplier Device Package	APM32
Technology	Silicon Carbide (SiC)
Vgs(th) (Max) @ Id	4.3 V

NVXK2VR40WXT2 Series

1200V 3 Phase Bridge Power Module

Part	Technology	Drain to Source Voltage (Vdss)	Drain to Source Voltage (Vdss)	Configuration	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Feature	Rds On (Max) @ Id, Vgs	Supplier Device Package	Grade	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Qualification	Power - Max [Max]	Package / Case	Package / Case	Package / Case
ON Semiconductor NVXK2VR40WXT2	Silicon Carbide (SiC)	1200 V	1.2 kV	6 N-Channel (3-Phase Bridge)	106 nC	Silicon Carbide (SiC)	59 mOhm	APM32	Automotive	55 A	Through Hole	4.3 V	-55 °C	175 ░C	1789 pF	AEC-Q101	319 W	36.8 mm	32-PowerDIP Module	1.449 in

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

1200V 40mΩ 55A 3 Phase Bridge Power Module with temperature sensing and the lowest thermal resistance for PFC On Board Charger in xEV