Specification	NTD6416ANT4G

Current - Continuous Drain (Id) @ 25°C	17 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [x]	20 nC
Input Capacitance (Ciss) (Max) @ Vds	620 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	71 W
Rds On (Max) @ Id, Vgs [Max]	81 mOhm
Supplier Device Package	DPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

NTD6416AN Series

Single N-Channel Power MOSFET 100V, 17A, 81mΩ

Part	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [x]	Supplier Device Package	Vgs (Max)	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs [Max]	Technology	Vgs(th) (Max) @ Id	Package / Case	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)
ON Semiconductor NTD6416ANT4G	17 A	20 nC	DPAK	20 V	71 W	81 mOhm	MOSFET (Metal Oxide)	4 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	N-Channel	620 pF	10 V	Surface Mount	-55 °C	175 ░C	100 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Single N-Channel 100 V Power MOSFET

Technical documentation and resources