Discrete Semiconductor Products

SI7601DN-T1-GE3

Obsolete

MOSFET P-CH 20V 16A PPAK1212-8

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 20V 16A PPAK1212-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7601DN-T1-GE3

Current - Continuous Drain (Id) @ 25°C	16 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	27 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-50 °C
Package / Case	PowerPAK® 1212-8
Power Dissipation (Max)	52 W, 3.8 W
Rds On (Max) @ Id, Vgs	19.2 mOhm
Supplier Device Package	PowerPAK® 1212-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.6 V

Part	Power Dissipation (Max)	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Rds On (Max) @ Id, Vgs	Technology	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Vgs (Max)	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	FET Type
Vishay General Semiconductor - Diodes Division SI7601DN-T1-GE3	3.8 W 52 W	PowerPAK® 1212-8	150 °C	-50 °C	19.2 mOhm	MOSFET (Metal Oxide)	Surface Mount	16 A	20 V	1.6 V	12 V	PowerPAK® 1212-8	27 nC	2.5 V 4.5 V	P-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 20 V 16A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

Technical documentation and resources

No documents available