Discrete Semiconductor Products

KSH3055ITU

Obsolete

TRANS NPN 60V 10A IPAK

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

TRANS NPN 60V 10A IPAK

Technical Specifications

Parameters and characteristics for this part

Specification	KSH3055ITU

Current - Collector Cutoff (Max) [Max]	50 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	20
Frequency - Transition	2 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power - Max [Max]	1.75 W
Supplier Device Package	IPAK
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	8 V
Voltage - Collector Emitter Breakdown (Max)	60 V

NPN Epitaxial Silicon Transistor

Part	Power - Max [Max]	Operating Temperature	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Frequency - Transition	Supplier Device Package	Package / Case	Mounting Type	Voltage - Collector Emitter Breakdown (Max)	Transistor Type	Current - Collector Cutoff (Max) [Max]
ON Semiconductor KSH3055ITU	1.75 W	150 °C	8 V	20	2 MHz	IPAK	IPAK TO-251-3 Short Leads TO-251AA	Through Hole	60 V	NPN	50 µA
ON Semiconductor KSH3055TM	1.75 W	150 °C	8 V	20	2 MHz	DPAK	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	60 V	NPN	50 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

NPN Epitaxial Silicon Transistor

Technical documentation and resources