Discrete Semiconductor Products

VS-GT80DA120U

Active

IGBT MOD 1200V 139A 658W SOT227

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

IGBT MOD 1200V 139A 658W SOT227

Technical Specifications

Parameters and characteristics for this part

Specification	VS-GT80DA120U

Configuration	Single
Current - Collector (Ic) (Max) [Max]	139 A
IGBT Type	Trench
Input	Standard
Input Capacitance (Cies) @ Vce	4.4 nF
Mounting Type	Chassis Mount
NTC Thermistor	False
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	SOT-227-4, miniBLOC
Supplier Device Package	SOT-227
Vce(on) (Max) @ Vge, Ic	2.55 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

Part	NTC Thermistor	Operating Temperature [Max]	Operating Temperature [Min]	IGBT Type	Configuration	Input Capacitance (Cies) @ Vce	Package / Case	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Vce(on) (Max) @ Vge, Ic	Mounting Type	Input	Power - Max [Max]
Vishay General Semiconductor - Diodes Division VS-GT80DA120U		150 °C	-40 °C	Trench	Single	4.4 nF	SOT-227-4 miniBLOC	SOT-227	1200 V	139 A	2.55 V	Chassis Mount	Standard
Vishay General Semiconductor - Diodes Division VS-GT80DA60U		175 °C	-40 C	Trench Field Stop		10.8 nF	SOT-227-4 miniBLOC	SOT-227	600 V	123 A	2.45 V	Chassis Mount	Standard	454 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

IGBT Module Trench Single 1200 V 139 A 658 W Chassis Mount SOT-227

Technical documentation and resources