IRC730PBF

Obsolete

MOSFET N-CH 400V 5.5A TO220-5

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 400V 5.5A TO220-5

Technical Specifications

Parameters and characteristics for this part

Specification	IRC730PBF

Current - Continuous Drain (Id) @ 25°C	5.5 A
Drain to Source Voltage (Vdss)	400 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Feature	Current Sensing
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	38 nC
Input Capacitance (Ciss) (Max) @ Vds	700 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-5
Power Dissipation (Max) [Max]	74 W
Rds On (Max) @ Id, Vgs	1 Ohm
Supplier Device Package	TO-220-5
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Package / Case	Vgs(th) (Max) @ Id	Vgs (Max)	Mounting Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	FET Type	Technology	FET Feature
Vishay General Semiconductor - Diodes Division IRC730PBF	TO-220-5	4 V	20 V	Through Hole	400 V	5.5 A	-55 °C	150 °C	38 nC	74 W	700 pF	TO-220-5	10 V	1 Ohm	N-Channel	MOSFET (Metal Oxide)	Current Sensing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 400 V 5.5A (Tc) 74W (Tc) Through Hole TO-220-5

Technical documentation and resources