Specification	SSM3K344R,LF

Current - Continuous Drain (Id) @ 25°C	3 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	1.5 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	2 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	153 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3 Flat Leads
Power Dissipation (Max)	1 W
Rds On (Max) @ Id, Vgs	71 mOhm
Supplier Device Package	SOT-23F
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	8 V
Vgs(th) (Max) @ Id	1 V

SSM3K344 Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 20 V, 3.0 A, 0.071 Ω@4.5V, SOT-23F

Part	Operating Temperature	Technology	Vgs(th) (Max) @ Id	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Package / Case	Rds On (Max) @ Id, Vgs	Mounting Type	Vgs (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Drain to Source Voltage (Vdss)
Toshiba Semiconductor and Storage SSM3K344R,LF	150 °C	MOSFET (Metal Oxide)	1 V	SOT-23F	153 pF	1.5 V 4.5 V	N-Channel	SOT-23-3 Flat Leads	71 mOhm	Surface Mount	8 V	2 nC	3 A	1 W	20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 20 V, 3.0 A, 0.071 Ω@4.5V, SOT-23F

Technical documentation and resources