Discrete Semiconductor Products

PH1955L,115

Obsolete

MOSFET N-CH 55V 40A LFPAK56

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 55V 40A LFPAK56

Technical Specifications

Parameters and characteristics for this part

Specification	PH1955L,115

Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	18 nC
Input Capacitance (Ciss) (Max) @ Vds	1992 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-669, SC-100
Power Dissipation (Max)	75 W
Rds On (Max) @ Id, Vgs	17.3 mOhm
Supplier Device Package	Power-SO8, LFPAK56
Technology	MOSFET (Metal Oxide)
Vgs (Max)	15 V
Vgs(th) (Max) @ Id	2 V

Part	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	FET Type	Supplier Device Package	Vgs (Max)	Technology
Freescale Semiconductor - NXP PH1955L,115	55 V	-55 °C	175 ░C	SC-100 SOT-669	75 W	18 nC	1992 pF	Surface Mount	4.5 V 10 V	2 V	17.3 mOhm	N-Channel	LFPAK56 Power-SO8	15 V	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 55 V 40A (Tc) 75W (Tc) Surface Mount LFPAK56, Power-SO8

Technical documentation and resources

No documents available