Discrete Semiconductor Products

PH1955L,115

Obsolete

MOSFET N-CH 55V 40A LFPAK56

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 55V 40A LFPAK56

Technical Specifications

Parameters and characteristics for this part

Specification	PH1955L,115

Current - Continuous Drain (Id) (Tc)	40 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	18 nC
Input Capacitance (Ciss) (Max)	1992 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	SOT-669, SC-100
Package Name	LFPAK56, Power-SO8
Power Dissipation (Max)	75 W
Rds On (Max)	17.3 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	15 V
Vgs(th) (Max)	2 V

Part	Operating Temperature (Min)	Operating Temperature (Max)	Input Capacitance (Ciss) (Max)	Power Dissipation (Max)	FET Type	Drain to Source Voltage (Vdss)	Rds On (Max)	Package / Case	Vgs(th) (Max)	Package Name	Mounting Type	Current - Continuous Drain (Id) (Tc)	Vgs (Max)	Technology	Gate Charge (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)
NXP USA Inc. PH1955L,115	-55 °C	175 °C	1992 pF	75 W	N-Channel	55 V	17.3 mOhm	SC-100 SOT-669	2 V	LFPAK56 Power-SO8	Surface Mount	40 A	15 V	MOSFET (Metal Oxide)	18 nC	10 V	4.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

N-Channel 55 V 40A (Tc) 75W (Tc) Surface Mount LFPAK56, Power-SO8

Technical documentation and resources

No documents available