Discrete Semiconductor Products

IRFR220,118

Obsolete

MOSFET N-CH 200V 4.8A DPAK

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 200V 4.8A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	IRFR220,118

Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	14 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	280 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	42 W
Rds On (Max) @ Id, Vgs [Max]	800 mOhm
Supplier Device Package	DPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Mounting Type	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs [Max]	FET Type	Technology	Vgs(th) (Max) @ Id	Package / Case	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs
Freescale Semiconductor - NXP IRFR220,118	Surface Mount	200 V	800 mOhm	N-Channel	MOSFET (Metal Oxide)	4 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	20 V	10 V	DPAK	42 W	-55 °C	150 °C	280 pF	14 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 200 V 4.8A (Tc) 42W (Tc) Surface Mount DPAK

Technical documentation and resources