Discrete Semiconductor Products

RJH65T04BDPMA0#T2F

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IGBT TRENCH 650V 60A TO3PFP

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Discrete Semiconductor Products

Active

IGBT TRENCH 650V 60A TO3PFP

Technical Specifications

Parameters and characteristics for this part

Specification	RJH65T04BDPMA0#T2F

Current - Collector (Ic) (Max) [Max]	60 A
Gate Charge	74 nC
IGBT Type	Trench
Mounting Type	Through Hole
Operating Temperature	175 °C
Package / Case	SC-94
Power - Max [Max]	65 W
Reverse Recovery Time (trr)	80 ns
Supplier Device Package	TO-3PFP
Td (on/off) @ 25°C	125 ns, 35 ns
Test Condition	30 A, 10 Ohm, 15 V, 400 V
Vce(on) (Max) @ Vge, Ic	1.95 V
Voltage - Collector Emitter Breakdown (Max) [Max]	650 V

Part	Mounting Type	Reverse Recovery Time (trr)	Td (on/off) @ 25°C	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Package / Case	IGBT Type	Operating Temperature	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce(on) (Max) @ Vge, Ic	Gate Charge	Test Condition
Renesas Electronics Corporation RJH65T04BDPMA0#T2F	Through Hole	80 ns	35 ns 125 ns	65 W	60 A	TO-3PFP	SC-94	Trench	175 °C	650 V	1.95 V	74 nC	10 Ohm 15 V 30 A 400 V

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General part information

IGBT Trench 650 V 60 A 65 W Through Hole TO-3PFP

Technical documentation and resources