Specification	2SJ661-1E

Current - Continuous Drain (Id) @ 25°C	38 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	80 nC
Input Capacitance (Ciss) (Max) @ Vds	4360 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)	65 W, 1.65 W
Rds On (Max) @ Id, Vgs	39 mOhm
Supplier Device Package	TO-262-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

2SJ661 Series

P-Channel Power MOSFET -60V, -38A, 39mΩ

Part	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Type	Power Dissipation (Max)	Operating Temperature	Rds On (Max) @ Id, Vgs	Supplier Device Package	Technology	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]
ON Semiconductor 2SJ661-1E	38 A	60 V	Through Hole	4360 pF	20 V	P-Channel	1.65 W 65 W	150 °C	39 mOhm	TO-262-3	MOSFET (Metal Oxide)	80 nC	I2PAK TO-262-3 Long Leads TO-262AA	4 V	10 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

2SJ661 is a P-Channel Power MOSFET, -60V, -38A, 39mΩ, TO-262-3L/TO-263-2L for General-Purpose Swiching Device Application.