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SOT-23-3
Discrete Semiconductor Products

DMP3056L-7

Active
Diodes Inc

POWER MOSFET, P CHANNEL, 30 V, 4.3 A, 50 MILLIOHMS, SOT-23, 3 PINS, SURFACE MOUNT

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SOT-23-3
Discrete Semiconductor Products

DMP3056L-7

Active
Diodes Inc

POWER MOSFET, P CHANNEL, 30 V, 4.3 A, 50 MILLIOHMS, SOT-23, 3 PINS, SURFACE MOUNT

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMP3056L-7
Current - Continuous Drain (Id) @ 25°C4.3 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs11.8 nC
Input Capacitance (Ciss) (Max) @ Vds642 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)1.38 W
Supplier Device PackageSOT-23-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id2.1 V

DMP3056LDMQ Series

SINGLE P-Channel Enhancement Mode Field Effect Transistor

PartVgs (Max)Input Capacitance (Ciss) (Max) @ VdsSupplier Device PackageGradeCurrent - Continuous Drain (Id) @ 25°CTechnologyPower Dissipation (Max)QualificationDrive Voltage (Max Rds On, Min Rds On)Mounting TypePackage / CasePackage / Case [y]Package / Case [x]Gate Charge (Qg) (Max) @ Vgs [Max]Vgs(th) (Max) @ IdRds On (Max) @ Id, VgsFET TypeDrain to Source Voltage (Vdss)Operating Temperature [Min]Operating Temperature [Max]ConfigurationGate Charge (Qg) (Max) @ VgsPower - Max [Max]FET FeaturePower Dissipation (Max) [Max]
8 SO
Diodes Inc
20 V
969 pF
8-SO
Automotive
4.9 A
MOSFET (Metal Oxide)
1.2 W
AEC-Q101
4.5 V
10 V
Surface Mount
8-SOIC
3.9 mm
0.154 in
17.3 nC
2.1 V
45 mOhm
P-Channel
30 V
-55 °C
150 °C
Package Image for SOT26
Diodes Inc
20 V
948 pF
SOT-26
Automotive
4.3 A
MOSFET (Metal Oxide)
1.25 W
AEC-Q101
4.5 V
10 V
Surface Mount
SOT-23-6
21.1 nC
2.1 V
45 mOhm
P-Channel
30 V
-55 °C
150 °C
Package Image for SO-8
Diodes Inc
722 pF
8-SO
6.9 A
MOSFET (Metal Oxide)
Surface Mount
8-SOIC
3.9 mm
0.154 in
2.1 V
45 mOhm
30 V
-55 °C
150 °C
2 P-Channel
13.7 nC
2.5 W
Logic Level Gate
DT2042-04SOQ-7
Diodes Inc
20 V
948 pF
SOT-26
4.3 A
MOSFET (Metal Oxide)
1.25 W
4.5 V
10 V
Surface Mount
SOT-23-6
21.1 nC
2.1 V
45 mOhm
P-Channel
30 V
-55 °C
150 °C
8-SOP
Diodes Inc
20 V
722 pF
8-SOP
7.1 A
MOSFET (Metal Oxide)
2.5 W
4.5 V
10 V
Surface Mount
8-SOIC
3.9 mm
0.154 in
6.8 nC
2.1 V
45 mOhm
P-Channel
30 V
-55 °C
150 °C
Diodes Inc
25 V
642 pF
4.3 A
MOSFET (Metal Oxide)
4.5 V
10 V
2.1 V
P-Channel
30 V
-55 °C
150 °C
11.8 nC
1.38 W
SOT-23-3
Diodes Inc
25 V
642 pF
SOT-23-3
4.3 A
MOSFET (Metal Oxide)
1.38 W
4.5 V
10 V
Surface Mount
SC-59
SOT-23-3
TO-236-3
2.1 V
P-Channel
30 V
-55 °C
150 °C
11.8 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.39
10$ 0.31
100$ 0.18
500$ 0.17
1000$ 0.12
Digi-Reel® 1$ 0.39
10$ 0.31
100$ 0.18
500$ 0.17
1000$ 0.12
Tape & Reel (TR) 3000$ 0.11
6000$ 0.10
9000$ 0.09
30000$ 0.09
75000$ 0.09
NewarkEach (Supplied on Full Reel) 3000$ 0.15
6000$ 0.15
12000$ 0.15
18000$ 0.14

Description

General part information

DMP3056LDMQ Series

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP.