Discrete Semiconductor Products

IDV02S60CXKSA1

Obsolete

DIODE SIL CARB 600V 2A PGTO220

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Discrete Semiconductor Products

Obsolete

DIODE SIL CARB 600V 2A PGTO220

Technical Specifications

Parameters and characteristics for this part

Specification	IDV02S60CXKSA1

Capacitance @ Vr, F	60 pF
Current - Average Rectified (Io)	2 A
Current - Reverse Leakage @ Vr	15 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-2 Full Pack
Reverse Recovery Time (trr)	0 ns
Speed	500 mA
Supplier Device Package	PG-TO220-2 Full Pack
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.9 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Current - Reverse Leakage @ Vr	Package / Case	Technology	Reverse Recovery Time (trr)	Voltage - Forward (Vf) (Max) @ If	Capacitance @ Vr, F	Current - Average Rectified (Io)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Speed
INFINEON IDV02S60CXKSA1	600 V	Through Hole	15 µA	TO-220-2 Full Pack	SiC (Silicon Carbide) Schottky	0 ns	1.9 V	60 pF	2 A	175 ░C	-55 °C	PG-TO220-2 Full Pack	500 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.97

General part information

Diode 600 V 2A Through Hole PG-TO220-2 Full Pack

Technical documentation and resources