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MJPE31CH-QZ
Discrete Semiconductor Products

MJPE31CH-QZ

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Nexperia USA Inc.

100 V, 3 A NPN HIGH POWER BIPOLAR TRANSISTOR

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MJPE31CH-QZ
Discrete Semiconductor Products

MJPE31CH-QZ

Active
Nexperia USA Inc.

100 V, 3 A NPN HIGH POWER BIPOLAR TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

SpecificationMJPE31CH-QZ
Current - Collector (Ic) (Max) [Max]3 A
Current - Collector Cutoff (Max) [Max]1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]120
Frequency - Transition130 MHz
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature175 °C
Package / CaseTO-277, 3-PowerDFN
Power - Max [Max]1.6 W
QualificationAEC-Q101
Supplier Device PackageCFP15B
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic1.2 V
Voltage - Collector Emitter Breakdown (Max) [Max]100 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 250$ 0.38

Description

General part information

MJPE31CH-Q Series

NPN high power bipolar transistor in a power SOT1289B (CFP15B) flat lead Surface-Mounted Device (SMD) plastic package.