Discrete Semiconductor Products

SGW50N60HSFKSA1

Obsolete

IGBT 600V 100A 416W TO247-3

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Discrete Semiconductor Products

Obsolete

IGBT 600V 100A 416W TO247-3

Technical Specifications

Parameters and characteristics for this part

Specification	SGW50N60HSFKSA1

Current - Collector (Ic) (Max) [Max]	100 A
Current - Collector Pulsed (Icm)	150 A
Gate Charge	179 nC
IGBT Type	NPT
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	416 W
Supplier Device Package	PG-TO247-3-1
Switching Energy	1.96 mJ
Td (on/off) @ 25°C	47 ns
Td (on/off) @ 25°C	310 ns
Test Condition	6.8 Ohm, 50 A, 15 V, 400 V
Vce(on) (Max) @ Vge, Ic	3.15 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Part	Package / Case	Current - Collector (Ic) (Max) [Max]	Gate Charge	IGBT Type	Current - Collector Pulsed (Icm)	Power - Max [Max]	Switching Energy	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Test Condition	Vce(on) (Max) @ Vge, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]
INFINEON SGW50N60HSFKSA1	TO-247-3	100 A	179 nC	NPT	150 A	416 W	1.96 mJ	PG-TO247-3-1	150 °C	-55 °C	Through Hole	47 ns	310 ns	6.8 Ohm 15 V 50 A 400 V	3.15 V	600 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

IGBT NPT 600 V 100 A 416 W Through Hole PG-TO247-3-1

Technical documentation and resources

No documents available