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Infineon Technologies AG-FZ1200R17HP4HOSA2 IGBT Modules Trans IGBT Module N-CH 1700V 1.2KA 7800W Tray
Discrete Semiconductor Products

FZ1000R33HL3BPSA1

NRND
INFINEON

THE FZ1000R33HL3 IS A SINGLE SWITCH IGBT3 - L3 MODULE IN A IHV B HOUSING FOR INDUSTRIAL&TRACTION APPLICATIONS UP TO 3300 V AND 1000 A.

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Infineon Technologies AG-FZ1200R17HP4HOSA2 IGBT Modules Trans IGBT Module N-CH 1700V 1.2KA 7800W Tray
Discrete Semiconductor Products

FZ1000R33HL3BPSA1

NRND
INFINEON

THE FZ1000R33HL3 IS A SINGLE SWITCH IGBT3 - L3 MODULE IN A IHV B HOUSING FOR INDUSTRIAL&TRACTION APPLICATIONS UP TO 3300 V AND 1000 A.

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationFZ1000R33HL3BPSA1
ConfigurationSingle Switch
Current - Collector (Ic) (Max) [Max]1 kA
Current - Collector Cutoff (Max) [Max]5 mA
IGBT TypeTrench Field Stop
InputStandard
Input Capacitance (Cies) @ Vce190 nF
Mounting TypeChassis Mount
NTC ThermistorFalse
Operating Temperature [Max]150 °C
Operating Temperature [Min]-40 C
Package / CaseModule
Power - Max [Max]1600 W
Supplier Device PackageModule
Vce(on) (Max) @ Vge, Ic [Max]2.85 V
Voltage - Collector Emitter Breakdown (Max) [Max]3300 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTray 2$ 1672.85

Description

General part information

FZ1000 Series

IHV B 3300 V, 1000 A 130 mm single-switchIGBT Modulewith TRENCHSTOP™ IGBT 3, low switching losses and Emitter Controlled diode - The experienced solution for traction and industry applications. Also available as fast switching device:FZ1000R33HE3

Documents

Technical documentation and resources

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