Discrete Semiconductor Products

SIZ902DT-T1-GE3

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MOSFET 2N-CH 30V 16A 8POWERPAIR

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Discrete Semiconductor Products

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MOSFET 2N-CH 30V 16A 8POWERPAIR

Technical Specifications

Parameters and characteristics for this part

Specification	SIZ902DT-T1-GE3

Configuration	2 N-Channel (Half Bridge)
Current - Continuous Drain (Id) @ 25°C	16 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	21 nC
Input Capacitance (Ciss) (Max) @ Vds	790 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerWDFN
Power - Max	66 W, 29 W
Rds On (Max) @ Id, Vgs	12 mOhm
Supplier Device Package	8-PowerPair® (6x5)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id [Max]	2.2 V

Part	Package / Case	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	FET Feature	Configuration	Technology	Power - Max	Supplier Device Package	Mounting Type	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id [Max]	Operating Temperature [Min]	Operating Temperature [Max]
Vishay General Semiconductor - Diodes Division SIZ902DT-T1-GE3	8-PowerWDFN	16 A	30 V	Logic Level Gate	2 N-Channel (Half Bridge)	MOSFET (Metal Oxide)	29 W 66 W	8-PowerPair® (6x5)	Surface Mount	12 mOhm	21 nC	790 pF	2.2 V	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 30V 16A 29W, 66W Surface Mount 8-PowerPair® (6x5)

Technical documentation and resources