Discrete Semiconductor Products

IPW60R037CSFDXKSA1

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INFINEON

COOLMOS™ CSFD N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-247 PACKAGE; 37 MOHM;

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Discrete Semiconductor Products

IPW60R037CSFDXKSA1

Active

INFINEON

COOLMOS™ CSFD N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-247 PACKAGE; 37 MOHM;

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Technical Specifications

Parameters and characteristics for this part

Specification	IPW60R037CSFDXKSA1

Current - Continuous Drain (Id) @ 25°C	54 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	136 nC
Input Capacitance (Ciss) (Max) @ Vds	5623 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	245 W
Rds On (Max) @ Id, Vgs	37 mOhm
Supplier Device Package	PG-TO247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

IPW60R037 Series

Part	FET Type	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Supplier Device Package	Mounting Type	Package / Case	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Technology	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds
INFINEON IPW60R037P7XKSA1	N-Channel	255 W	650 V	PG-TO247-3	Through Hole	TO-247-3	4 V	10 V	20 V	MOSFET (Metal Oxide)	76 A	121 nC	150 °C	-55 °C	37 mOhm	5243 pF
INFINEON IPW60R037CSFDXKSA1	N-Channel	245 W	600 V	PG-TO247-3	Through Hole	TO-247-3	4.5 V	10 V	20 V	MOSFET (Metal Oxide)	54 A	136 nC	150 °C	-55 °C	37 mOhm	5623 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	237	$ 9.23
	Tube	1	$ 10.19
		10	$ 7.03
		100	$ 5.24
		500	$ 4.86
Newark	Each	1	$ 11.81
		10	$ 10.01
		25	$ 8.42
		50	$ 7.98
		100	$ 7.52
		480	$ 7.51
		720	$ 7.24

Description

General part information

IPW60R037 Series

IPW60R037CSFD CoolMOS™ superjunction MOSFET is an optimized device tailored to address the off-board EV-charging market segment. Thanks to low gate charge (Qg) and improved switching behavior it offers highest efficiency in the targeted market. In addition to that it comes along with an integrated fast body diode and tremendously reduced reverse recovery charge (Qrr) leading to highest reliability in resonant topologies. Due to these features the IPW60R037CSFD meets the efficiency and reliability standards of the off-board EV-charging station market and furthermore supports high power density solutions.

Documents

Technical documentation and resources