Zenode.ai Logo
Beta
TO-247-3 AC EP
Discrete Semiconductor Products

IRFP3703PBF

NRND
INFINEON

POWER MOSFET, N CHANNEL, 30 V, 210 A, 0.0023 OHM, TO-247AC, THROUGH HOLE

Deep-Dive with AI

Search across all available documentation for this part.

TO-247-3 AC EP
Discrete Semiconductor Products

IRFP3703PBF

NRND
INFINEON

POWER MOSFET, N CHANNEL, 30 V, 210 A, 0.0023 OHM, TO-247AC, THROUGH HOLE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIRFP3703PBF
Current - Continuous Drain (Id) @ 25°C210 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)7 V, 10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs209 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]8250 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power Dissipation (Max)3.8 W, 230 W
Rds On (Max) @ Id, Vgs2.8 mOhm
Supplier Device PackageTO-247AC
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 3500$ 4.79
Tube 1$ 4.29
10$ 2.88
100$ 2.37

Description

General part information

IRFP3703 Series

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.