
S70GL02GS12FHIV20
ActiveFLASH MEMORY, PARALLEL NOR, 2 GBIT, 256M X 8BIT, CFI, PARALLEL, FBGA, 64 PINS
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S70GL02GS12FHIV20
ActiveFLASH MEMORY, PARALLEL NOR, 2 GBIT, 256M X 8BIT, CFI, PARALLEL, FBGA, 64 PINS
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Technical Specifications
Parameters and characteristics for this part
| Specification | S70GL02GS12FHIV20 |
|---|---|
| Access Time | 120 ns |
| Memory Format | FLASH |
| Memory Interface | Parallel |
| Memory Organization | 128M x 16 |
| Memory Size | 2 Gbit |
| Memory Type | Non-Volatile |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 85 C |
| Operating Temperature [Min] | -40 ¯C |
| Package / Case | 64-LBGA |
| Supplier Device Package | 64-FBGA (13x11) |
| Technology | FLASH - NOR |
| Voltage - Supply [Max] | 3.6 V |
| Voltage - Supply [Min] | 1.65 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
S70GL02 Series
S70GL02GS12FHIV20 is a 2-Gigabit MirrorBit® flash memory device. It is fabricated using 65nm MirrorBit Eclipse process technology. This device offers a fast page access time of 25ns with a corresponding random access time of 120ns. It features a write buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard single-byte/word programming algorithms. This makes the device an ideal product for today’s embedded applications that require higher density, better performance, and lower power consumption.
Documents
Technical documentation and resources