SQJ202EP-T1_GE3

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MOSFET 2N-CH 12V 20A PPAK SO8

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MOSFET 2N-CH 12V 20A PPAK SO8

Technical Specifications

Parameters and characteristics for this part

Specification	SQJ202EP-T1_GE3

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C [Max]	60 A
Current - Continuous Drain (Id) @ 25°C [Min]	20 A
Drain to Source Voltage (Vdss)	12 V
Gate Charge (Qg) (Max) @ Vgs	22 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	975 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8 Dual
Power - Max [Max]	48 W
Power - Max [Min]	27 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	6.5 mOhm
Supplier Device Package	PowerPAK® SO-8 Dual Asymmetric
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2 V

Part	Package / Case	Technology	Grade	Mounting Type	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C [Min]	Current - Continuous Drain (Id) @ 25°C [Max]	Power - Max [Min]	Power - Max [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Configuration	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Qualification
Vishay General Semiconductor - Diodes Division SQJ202EP-T1_GE3	PowerPAK® SO-8 Dual	MOSFET (Metal Oxide)	Automotive	Surface Mount	6.5 mOhm	20 A	60 A	27 W	48 W	-55 °C	175 ░C	12 V	975 pF	PowerPAK® SO-8 Dual Asymmetric	2 N-Channel (Dual)	22 nC	2 V	AEC-Q101

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General part information

Mosfet Array 12V 20A, 60A 27W, 48W Surface Mount PowerPAK® SO-8 Dual Asymmetric

Technical documentation and resources