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DocumentsSI7980DP-T1-GE3 | Datasheet
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DocumentsSI7980DP-T1-GE3 | Datasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | SI7980DP-T1-GE3 |
|---|---|
| Channel Count | 2 |
| Configuration | N-Channel |
| Configuration - Features | Half Bridge |
| Current - Continuous Drain (Id) | 8 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Max) | 27 nC |
| Input Capacitance (Ciss) (Max) | 1010 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | PowerPAK® SO-8 Dual |
| Package Name | PowerPAK® SO-8 Dual |
| Power - Max (Value 1) | 19.8 W |
| Power - Max (Value 2) | 21.9 W |
| Rds On (Max) | 22 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | Updated |
|---|---|---|---|---|
CAD
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Description
General part information
SI7980 Series
Mosfet Array 20V 8A 19.8W, 21.9W Surface Mount PowerPAK® SO-8 Dual
Documents
Technical documentation and resources