Discrete Semiconductor Products

IRGIB7B60KDPBF

Obsolete

IGBT W/ULTRAFAST SOFT RECOVERY D

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

IGBT W/ULTRAFAST SOFT RECOVERY D

Technical Specifications

Parameters and characteristics for this part

Specification	IRGIB7B60KDPBF

Current - Collector (Ic) (Max) [Max]	12 A
Gate Charge	29 nC
IGBT Type	NPT
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power - Max [Max]	39 W
Reverse Recovery Time (trr)	95 ns
Supplier Device Package	TO-220AB Full-Pak
Switching Energy	160 µJ, 160 µJ
Td (on/off) @ 25°C [custom]	140 ns
Td (on/off) @ 25°C [custom]	23 ns
Test Condition	400 V, 15 V, 50 Ohm, 8 A
Vce(on) (Max) @ Vge, Ic [Max]	2.2 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Part	Current - Collector (Ic) (Max) [Max]	Switching Energy	IGBT Type	Operating Temperature [Max]	Operating Temperature [Min]	Td (on/off) @ 25°C [custom]	Td (on/off) @ 25°C [custom]	Package / Case	Mounting Type	Supplier Device Package	Test Condition	Reverse Recovery Time (trr)	Gate Charge	Power - Max [Max]	Vce(on) (Max) @ Vge, Ic [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]
INFINEON IRGIB7B60KDPBF	12 A	160 µJ 160 µJ	NPT	175 °C	-55 °C	140 ns	23 ns	TO-220-3 Full Pack	Through Hole	TO-220AB Full-Pak	8 A 15 V 50 Ohm 400 V	95 ns	29 nC	39 W	2.2 V	600 V
INFINEON IRGIB7B60KDPBF	12 A	160 µJ 160 µJ	NPT	175 °C	-55 °C	140 ns	23 ns	TO-220-3 Full Pack	Through Hole	TO-220AB Full-Pak	8 A 15 V 50 Ohm 400 V	95 ns	29 nC	39 W	2.2 V	600 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

IGBT NPT 600 V 12 A 39 W Through Hole TO-220AB Full-Pak

Technical documentation and resources

No documents available