Discrete Semiconductor Products

MCU90N06A-TP

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N-CHANNEL MOSFET, DPAK

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Discrete Semiconductor Products

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N-CHANNEL MOSFET, DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	MCU90N06A-TP

Current - Continuous Drain (Id) @ 25°C	90 A
Drain to Source Voltage (Vdss)	60 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	102 nC
Input Capacitance (Ciss) (Max) @ Vds	5170 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max) [Max]	110 W
Rds On (Max) @ Id, Vgs	7.2 mOhm
Supplier Device Package	DPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	FET Type	Vgs(th) (Max) @ Id	Package / Case	Vgs (Max)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]
Micro Commercial Components MCU90N06A-TP	90 A	DPAK	N-Channel	2.5 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	20 V	Surface Mount	5170 pF	MOSFET (Metal Oxide)	102 nC	60 V	110 W	7.2 mOhm	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 60 V 90A 110W Surface Mount DPAK

Technical documentation and resources

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