Discrete Semiconductor Products

SI1022R-T1-GE3

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MOSFET N-CH 60V 330MA SC75A

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Discrete Semiconductor Products

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MOSFET N-CH 60V 330MA SC75A

Technical Specifications

Parameters and characteristics for this part

Specification	SI1022R-T1-GE3

Current - Continuous Drain (Id) @ 25°C	330 mA
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	0.6 nC
Input Capacitance (Ciss) (Max) @ Vds	30 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-75, SOT-416
Power Dissipation (Max) [Max]	250 mW
Rds On (Max) @ Id, Vgs	1.25 Ohm
Supplier Device Package	SC-75A
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	FET Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Technology	Power Dissipation (Max) [Max]	Package / Case	Supplier Device Package	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C
Vishay General Semiconductor - Diodes Division SI1022R-T1-GE3	N-Channel	60 V	4.5 V 10 V	MOSFET (Metal Oxide)	250 mW	SC-75 SOT-416	SC-75A	1.25 Ohm	0.6 nC	2.5 V	30 pF	-55 °C	150 °C	Surface Mount	20 V	330 mA
Vishay General Semiconductor - Diodes Division SI1022R-T1-E3	N-Channel	60 V	4.5 V 10 V	MOSFET (Metal Oxide)	250 mW	SC-75 SOT-416	SC-75A	1.25 Ohm	0.6 nC	2.5 V	30 pF	-55 °C	150 °C	Surface Mount	20 V	330 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 60 V 330mA (Ta) 250mW (Ta) Surface Mount SC-75A

Technical documentation and resources