Discrete Semiconductor Products

IRL40T209ATMA1

Obsolete

MOSFET N-CH 40V 300A 8HSOF

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 40V 300A 8HSOF

Technical Specifications

Parameters and characteristics for this part

Specification	IRL40T209ATMA1

Current - Continuous Drain (Id) @ 25°C	300 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	269 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	16000 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerSFN
Power Dissipation (Max)	500 W
Rds On (Max) @ Id, Vgs	0.72 mOhm
Supplier Device Package	PG-HSOF-8-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.4 V

Part	Drain to Source Voltage (Vdss)	Operating Temperature [Max]	Operating Temperature [Min]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Package / Case	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Supplier Device Package	Technology
INFINEON IRL40T209ATMA1	40 V	175 °C	-55 °C	16000 pF	500 W	0.72 mOhm	269 nC	N-Channel	Surface Mount	4.5 V 10 V	2.4 V	8-PowerSFN	300 A	20 V	PG-HSOF-8-1	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

N-Channel 40 V 300A (Tc) 500W (Tc) Surface Mount PG-HSOF-8-1

Technical documentation and resources