Discrete Semiconductor Products

CDBJSC101700-G

Obsolete

DIODE SIL CARB 1.7KV 35A TO220-2

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Discrete Semiconductor Products

Obsolete

DIODE SIL CARB 1.7KV 35A TO220-2

Technical Specifications

Parameters and characteristics for this part

Specification	CDBJSC101700-G

Capacitance @ Vr, F	1400 pF
Current - Average Rectified (Io)	35 A
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	0 ns
Speed	500 mA
Supplier Device Package	TO-220-2
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1700 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Speed	Mounting Type	Technology	Current - Average Rectified (Io)
Comchip Technology CDBJSC101700-G	TO-220-2	175 ░C	-55 °C	1400 pF	0 ns	TO-220-2	1700 V	1.7 V	500 mA	Through Hole	SiC (Silicon Carbide) Schottky	35 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

Diode 1700 V 35A Through Hole TO-220-2

Technical documentation and resources

No documents available