Discrete Semiconductor Products

SIS430DN-T1-GE3

Obsolete

MOSFET N-CH 25V 35A PPAK 1212-8

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 25V 35A PPAK 1212-8

Technical Specifications

Parameters and characteristics for this part

Specification	SIS430DN-T1-GE3

Current - Continuous Drain (Id) (Tc)	35 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	40 nC
Input Capacitance (Ciss) (Max)	1600 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® 1212-8
Package Name	PowerPAK® 1212-8
Power Dissipation (Max)	52 W, 3.8 W
Rds On (Max)	5.1 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.5 V

Part	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Gate Charge (Max)	Package / Case	Vgs(th) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Rds On (Max)	Package Name	Technology	Mounting Type	Input Capacitance (Ciss) (Max)	Current - Continuous Drain (Id) (Tc)	FET Type	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Vgs (Max)
Vishay Dale SIS430DN-T1-GE3	10 V	4.5 V	40 nC	PowerPAK® 1212-8	2.5 V	-55 °C	150 °C	5.1 mOhm	PowerPAK® 1212-8	MOSFET (Metal Oxide)	Surface Mount	1600 pF	35 A	N-Channel	3.8 W 52 W	25 V	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

N-Channel 25 V 35A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

Technical documentation and resources