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Technical Specifications
Parameters and characteristics for this part
| Specification | PMN55ENEX |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 4.5 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-457, SC-74 |
| Power Dissipation (Max) | 6.25 W |
| Power Dissipation (Max) | 560 mW |
| Rds On (Max) @ Id, Vgs | 60 mOhm |
| Supplier Device Package | 6-TSOP |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.7 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 1055 | $ 0.81 | |
Description
General part information
PMN55ENE Series
60 V, N-channel Trench MOSFET
Documents
Technical documentation and resources