Discrete Semiconductor Products

1N4385 BK PBFREE

Obsolete

DIODE GEN PURP 600V 1A DO41

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

DIODE GEN PURP 600V 1A DO41

Technical Specifications

Parameters and characteristics for this part

Specification	1N4385 BK PBFREE

Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	200 C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-204AL, Axial, DO-41
Reverse Recovery Time (trr)	10 µs
Speed [Min]	200 mA, 500 ns
Supplier Device Package	DO-41
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.1 V

Part	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Speed [Min]	Reverse Recovery Time (trr)	Voltage - Forward (Vf) (Max) @ If	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Supplier Device Package	Technology
Central Semiconductor Corp 1N4385 BK PBFREE	1 A	600 V	10 µA	200 mA 500 ns	10 µs	1.1 V	Axial DO-204AL DO-41	200 C	-65 C	Through Hole	DO-41	Standard
Central Semiconductor Corp 1N4385 BK TIN/LEAD	1 A	600 V	10 µA	200 mA 500 ns	10 µs	1.1 V	Axial DO-204AL DO-41	200 C	-65 C	Through Hole	DO-41	Standard

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

Diode 600 V 1A Through Hole DO-41

Technical documentation and resources

No documents available