Discrete Semiconductor Products

IPD035N06L3GATMA1

Obsolete

MOSFET N-CH 60V 90A TO252-3

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 60V 90A TO252-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPD035N06L3GATMA1

Current - Continuous Drain (Id) @ 25°C	90 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	79 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	13000 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)	167 W
Rds On (Max) @ Id, Vgs [Max]	3.5 mOhm
Supplier Device Package	PG-TO252-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.2 V

Part	Mounting Type	Package / Case	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs [Max]	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)	Technology	Supplier Device Package	FET Type
INFINEON IPD035N06L3GATMA1	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	2.2 V	90 A	79 nC	4.5 V 10 V	175 °C	-55 °C	60 V	3.5 mOhm	20 V	13000 pF	167 W	MOSFET (Metal Oxide)	PG-TO252-3	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

N-Channel 60 V 90A (Tc) 167W (Tc) Surface Mount PG-TO252-3

Technical documentation and resources