Discrete Semiconductor Products

SIZ320DT-T1-GE3

LTB

MOSFET 2N-CH 25V 30A/40A 8PWR33

Search across all available documentation for this part.

Discrete Semiconductor Products

LTB

MOSFET 2N-CH 25V 30A/40A 8PWR33

Technical Specifications

Parameters and characteristics for this part

Specification	SIZ320DT-T1-GE3

Channel Count	2
Configuration	N-Channel
Configuration - Features	Dual
Current - Continuous Drain (Id) (Tc)	30 A
Drain to Source Voltage (Vdss)	25 V
Gate Charge (Max)	11.9 nC, 8.9 nC
Input Capacitance (Ciss) (Max)	660 pF, 1370 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	8-PowerWDFN
Package Length	3 mm
Package Name	8-Power33
Package Width	3 mm
Power - Max (Value 1)	16.7 W
Power - Max (Value 2)	31 W
Rds On (Max)	8.3 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	2.4 V

Part	Channel Count	Configuration	Configuration - Features	Drain to Source Voltage (Vdss)	Operating Temperature (Min)	Operating Temperature (Max)	Vgs(th) (Max)	Package / Case	Rds On (Max)	Mounting Type	Package Name	Package Length	Package Width	Technology	Input Capacitance (Ciss) (Max)	Gate Charge (Max)	Current - Continuous Drain (Id) (Tc)	Power - Max (Value 1)	Power - Max (Value 2)
Vishay Dale SIZ320DT-T1-GE3	2	N-Channel	Dual	25 V	-55 °C	150 °C	2.4 V	8-PowerWDFN	8.3 mOhm	Surface Mount	8-Power33	3 mm	3 mm	MOSFET (Metal Oxide)	660 pF 1370 pF	8.9 nC 11.9 nC	30 A	16.7 W	31 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

3D models and CAD resources for this part

General part information

Mosfet Array 25V 30A (Tc), 40A (Tc) 16.7W, 31W Surface Mount 8-Power33 (3x3)

Technical documentation and resources