Discrete Semiconductor Products

BCY78-X TIN/LEAD

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BIPOLAR TRANSISTORS - BJT PNP 32VCBO 5.0VEBO 100MA 340MW 1W

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Discrete Semiconductor Products

Active

BIPOLAR TRANSISTORS - BJT PNP 32VCBO 5.0VEBO 100MA 340MW 1W

Technical Specifications

Parameters and characteristics for this part

Specification	BCY78-X TIN/LEAD

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	15 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	380
Frequency - Transition	100 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	200 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-206AA, TO-18-3 Metal Can
Power - Max [Max]	1 W
Supplier Device Package	TO-18
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	800 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	32 V

Part	Frequency - Transition	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic	Transistor Type	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]	Supplier Device Package	Package / Case
Central Semiconductor Corp BCY78-X TIN/LEAD	100 MHz	15 nA	380	800 mV	PNP	Through Hole	200 °C	-65 °C	100 mA	32 V	1 W	TO-18	TO-18-3 Metal Can TO-206AA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 1.13
Mouser	N/A	2000	$ 1.05

General part information

BIPOLAR TRANSISTORS - BJT PNP 32VCBO 5.0VEBO 100MA 340MW 1W

Technical documentation and resources

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