Discrete Semiconductor Products

BSR19A,215

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TRANS NPN 160V 0.3A TO236AB

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Discrete Semiconductor Products

Active

TRANS NPN 160V 0.3A TO236AB

Technical Specifications

Parameters and characteristics for this part

Specification	BSR19A,215

Current - Collector (Ic) (Max) [Max]	300 mA
Current - Collector Cutoff (Max) [Max]	50 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	80
Frequency - Transition	300 MHz
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	250 mW
Qualification	AEC-Q101
Supplier Device Package	TO-236AB
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	150 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	160 V

Part	Current - Collector (Ic) (Max) [Max]	Operating Temperature	Mounting Type	Power - Max [Max]	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package	Qualification	Current - Collector Cutoff (Max) [Max]	Grade	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Frequency - Transition
Freescale Semiconductor - NXP BSR19A,215	300 mA	150 °C	Surface Mount	250 mW	NPN	80	TO-236AB	AEC-Q101	50 nA	Automotive	SC-59 SOT-23-3 TO-236-3	160 V	150 mV	300 MHz

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General part information

Bipolar (BJT) Transistor NPN 160 V 300 mA 300MHz 250 mW Surface Mount TO-236AB

Technical documentation and resources