Discrete Semiconductor Products

SI3439KDWA-TP

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MOSFET N/P-CH 20V 0.75A SOT363

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Discrete Semiconductor Products

Active

MOSFET N/P-CH 20V 0.75A SOT363

Technical Specifications

Parameters and characteristics for this part

Specification	SI3439KDWA-TP

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	600 mA, 750 mA
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	0.86 nC, 0.8 nC
Input Capacitance (Ciss) (Max) @ Vds	40 pF, 33 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-363, SC-88, 6-TSSOP
Rds On (Max) @ Id, Vgs	850 mOhm, 300 mOhm
Supplier Device Package	SOT-363
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.1 V

Part	Technology	Vgs(th) (Max) @ Id	Configuration	FET Feature	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Operating Temperature	Rds On (Max) @ Id, Vgs	Package / Case	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Max]	Operating Temperature [Min]
MCC (Micro Commercial Components) SI3439KDW-TP	MOSFET (Metal Oxide)	1.1 V	N and P-Channel	Logic Level Gate	660 mA 750 mA	Surface Mount	113 pF 120 pF	20 V	150 °C	380 mOhm 520 mOhm	6-TSSOP SC-88 SOT-363	SOT-363
MCC (Micro Commercial Components) SI3439KDWA-TP	MOSFET (Metal Oxide)	1.1 V	N and P-Channel	Logic Level Gate	600 mA 750 mA	Surface Mount	33 pF 40 pF	20 V		300 mOhm 850 mOhm	6-TSSOP SC-88 SOT-363	SOT-363	0.8 nC 0.86 nC	150 °C	-55 °C
MCC (Micro Commercial Components) SI3439KDWA-TP	MOSFET (Metal Oxide)	1.1 V	N and P-Channel	Logic Level Gate	600 mA 750 mA	Surface Mount	33 pF 40 pF	20 V		300 mOhm 850 mOhm	6-TSSOP SC-88 SOT-363	SOT-363	0.8 nC 0.86 nC	150 °C	-55 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 20V 750mA, 600mA 150mW Surface Mount SOT-363

Technical documentation and resources