Discrete Semiconductor Products

FQA6N80

Obsolete

MOSFET N-CH 800V 6.3A TO3P

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 800V 6.3A TO3P

Technical Specifications

Parameters and characteristics for this part

Specification	FQA6N80

Current - Continuous Drain (Id) @ 25°C	6.3 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	31 nC
Input Capacitance (Ciss) (Max) @ Vds	1500 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-65-3, TO-3P-3
Power Dissipation (Max)	185 W
Rds On (Max) @ Id, Vgs	1.95 Ohm
Supplier Device Package	TO-3P
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Technology	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]
ON Semiconductor FQA6N80	5 V	1500 pF	1.95 Ohm	MOSFET (Metal Oxide)	10 V	SC-65-3 TO-3P-3	N-Channel	-55 °C	150 °C	185 W	31 nC	30 V	800 V	6.3 A	TO-3P	Through Hole
ON Semiconductor FQA65N06	4 V	2410 pF	16 mOhm	MOSFET (Metal Oxide)	10 V	SC-65-3 TO-3P-3	N-Channel	-55 °C	175 ░C	183 W		25 V	60 V	72 A	TO-3P	Through Hole	65 nC
ON Semiconductor FQA6N90	5 V		1.9 Ohm	MOSFET (Metal Oxide)	10 V	SC-65-3 TO-3P-3	N-Channel	-55 °C	150 °C		52 nC	30 V	900 V	6.4 A	TO-3P	Through Hole		1880 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 800 V 6.3A (Tc) 185W (Tc) Through Hole TO-3P

Technical documentation and resources