Discrete Semiconductor Products
RQ3N025ATTB1
ActiveRohm Semiconductor
PCH -80V -2.5A, HSMT8, POWER MOSFET
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Discrete Semiconductor Products
RQ3N025ATTB1
ActiveRohm Semiconductor
PCH -80V -2.5A, HSMT8, POWER MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | RQ3N025ATTB1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 2.5 A, 7 A |
| Drain to Source Voltage (Vdss) | 80 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 6 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 13 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 485 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | 8-PowerVDFN |
| Power Dissipation (Max) | 14 W, 2 W |
| Rds On (Max) @ Id, Vgs | 240 mOhm |
| Supplier Device Package [custom] | 8-HSMT |
| Supplier Device Package [x] | 3.2 |
| Supplier Device Package [y] | 3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 2990 | $ 1.24 | |
Description
General part information
RQ3N025AT Series
RQ3N025AT is a power MOSFET with low-on resistance and High power package, suitable for Switching and Motor drives applications.
Documents
Technical documentation and resources