Discrete Semiconductor Products

IDH10S60CAKSA1

Unknown

DIODE SIL CARB 600V 10A TO220-2

Search across all available documentation for this part.

Discrete Semiconductor Products

Unknown

DIODE SIL CARB 600V 10A TO220-2

Technical Specifications

Parameters and characteristics for this part

Specification	IDH10S60CAKSA1

Capacitance @ Vr, F	480 pF
Current - Average Rectified (Io)	10 A
Current - Reverse Leakage @ Vr	140 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	0 ns
Speed	500 mA
Supplier Device Package	PG-TO220-2-2
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Reverse Recovery Time (trr)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Supplier Device Package	Capacitance @ Vr, F	Technology	Current - Reverse Leakage @ Vr	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case
INFINEON IDH10S60CAKSA1	0 ns	175 ░C	-55 °C	10 A	1.7 V	Through Hole	PG-TO220-2-2	480 pF	SiC (Silicon Carbide) Schottky	140 µA	500 mA	600 V	TO-220-2

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 600 V 10A Through Hole PG-TO220-2-2

Technical documentation and resources