Discrete Semiconductor Products

TSM126CX RFG

NRND

MOSFET N-CH 600V 30MA SOT23

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Discrete Semiconductor Products

NRND

MOSFET N-CH 600V 30MA SOT23

Technical Specifications

Parameters and characteristics for this part

Specification	TSM126CX RFG

Current - Continuous Drain (Id) @ 25°C	30 mA
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	10 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	0 V
FET Feature	Depletion Mode
FET Type	N-Channel, N-Channel, Depletion Mode
Gate Charge (Qg) (Max) @ Vgs [Max]	1.18 nC
Input Capacitance (Ciss) (Max) @ Vds	51.42 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	500 mW
Rds On (Max) @ Id, Vgs	800 Ohm
Supplier Device Package	SOT-23
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	1 V

Part	FET Type	FET Feature	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Vgs (Max)	Vgs(th) (Max) @ Id	Technology	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Mounting Type
Taiwan Semiconductor Corporation TSM126CX RFG	N-Channel N-Channel Depletion Mode	Depletion Mode	800 Ohm	0 V	10 V	51.42 pF	500 mW	150 °C	-55 °C	SOT-23	1.18 nC	SC-59 SOT-23-3 TO-236-3	20 V	1 V	MOSFET (Metal Oxide)	30 mA	600 V	Surface Mount

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General part information

N-Channel 600 V 30mA (Tc) 500mW (Ta) Surface Mount SOT-23

Technical documentation and resources