Discrete Semiconductor Products
IRFHM792TRPBF
ObsoleteINFINEON
IR MOSFET™ N+N DUAL POWER MOSFET ; PQFN 3.3 X 3.3 PACKAGE; 195 MOHM;
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Discrete Semiconductor Products
IRFHM792TRPBF
ObsoleteINFINEON
IR MOSFET™ N+N DUAL POWER MOSFET ; PQFN 3.3 X 3.3 PACKAGE; 195 MOHM;
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IRFHM792TRPBF |
|---|---|
| Configuration | 2 N-Channel (Dual) |
| Current - Continuous Drain (Id) @ 25°C | 2.3 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 6.3 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 251 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerVDFN |
| Power - Max [Max] | 2.3 W |
| Rds On (Max) @ Id, Vgs | 195 mOhm |
| Supplier Device Package | 8-PQFN (3.3x3.3), Power33 |
| Supplier Device Package [x] | 3.3 |
| Supplier Device Package [y] | 3.3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 0.00 | |
Description
General part information
IRFHM792 Series
The StrongIRFET™ power MOSFET family is optimized for low RDS(on)and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.