Discrete Semiconductor Products

AUIRFP4110

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AUIRFP4110 IS AN AUTOMOTIVE MOSFET OFFERING 100V, N-CH, 4.5 MΩ MAX, TO-247, GEN 10.7 FOR HIGH-PERFORMANCE AUTOMOTIVE APPLICATIONS.

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Discrete Semiconductor Products

Active

AUIRFP4110 IS AN AUTOMOTIVE MOSFET OFFERING 100V, N-CH, 4.5 MΩ MAX, TO-247, GEN 10.7 FOR HIGH-PERFORMANCE AUTOMOTIVE APPLICATIONS.

Technical Specifications

Parameters and characteristics for this part

Specification	AUIRFP4110

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	210 nC
Grade	Automotive
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	370 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	4.5 mOhm
Supplier Device Package	TO-247AC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Technology	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Max]	Operating Temperature [Min]	FET Type	Vgs (Max)	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Qualification	Mounting Type	Vgs(th) (Max) @ Id	Package / Case	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Grade
INFINEON AUIRFP4110	MOSFET (Metal Oxide)	210 nC	175 °C	-55 °C	N-Channel	20 V	100 V	4.5 mOhm	AEC-Q101	Through Hole	4 V	TO-247-3	370 W	10 V	120 A	TO-247AC	Automotive
INFINEON AUIRFP4110	MOSFET (Metal Oxide)	210 nC	175 °C	-55 °C	N-Channel	20 V	100 V	4.5 mOhm	AEC-Q101	Through Hole	4 V	TO-247-3	370 W	10 V	120 A	TO-247AC	Automotive

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 100 V 120A (Tc) 370W (Tc) Through Hole TO-247AC

Technical documentation and resources