
Discrete Semiconductor Products
MJPE2873Z
ActiveNexperia USA Inc.
50 V, 2 A NPN HIGH POWER BIPOLAR TRANSISTOR
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Discrete Semiconductor Products
MJPE2873Z
ActiveNexperia USA Inc.
50 V, 2 A NPN HIGH POWER BIPOLAR TRANSISTOR
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | MJPE2873Z |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 2 A |
| Current - Collector Cutoff (Max) [Max] | 100 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 120 |
| Frequency - Transition | 130 MHz |
| Mounting Type | Surface Mount |
| Operating Temperature | 175 °C |
| Package / Case | TO-277, 3-PowerDFN |
| Power - Max [Max] | 1.6 W |
| Supplier Device Package | CFP15B |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 300 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 50 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 0.14 | |
Description
General part information
MJPE2873 Series
NPN high power bipolar transistor in a power SOT1289B (CFP15B) flat lead Surface-Mounted Device (SMD) plastic package.
Documents
Technical documentation and resources