Discrete Semiconductor Products

SI8445DB-T2-E1

Obsolete

MOSFET P-CH 20V 9.8A 4MICROFOOT

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 20V 9.8A 4MICROFOOT

Technical Specifications

Parameters and characteristics for this part

Specification	SI8445DB-T2-E1

Current - Continuous Drain (Id) (Tc)	9.8 A
Drain to Source Voltage (Vdss)	20 V
FET Type	P-Channel
Gate Charge (Max)	16 nC
Input Capacitance (Ciss) (Max)	700 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	CSPBGA, 4-XFBGA
Package Name	4-Microfoot
Power Dissipation (Max)	1.8 W, 11.4 W
Rds On (Max)	84 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	5 V
Vgs(th) (Max)	850 mV

Part	Package Name	Power Dissipation (Max)	Technology	Gate Charge (Max)	FET Type	Operating Temperature (Min)	Operating Temperature (Max)	Mounting Type	Vgs (Max)	Vgs(th) (Max)	Rds On (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) (Tc)	Package / Case	Input Capacitance (Ciss) (Max)
Vishay Dale SI8445DB-T2-E1	4-Microfoot	1.8 W 11.4 W	MOSFET (Metal Oxide)	16 nC	P-Channel	-55 °C	150 °C	Surface Mount	5 V	850 mV	84 mOhm	20 V	9.8 A	4-XFBGA CSPBGA	700 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

P-Channel 20 V 9.8A (Tc) 1.8W (Ta), 11.4W (Tc) Surface Mount 4-Microfoot

Technical documentation and resources