Technical Specifications
Parameters and characteristics for this part
| Specification | IDW20G120C5BFKSA1 |
|---|---|
| Current - Average Rectified (Io) (per Diode) | 31 A |
| Current - Reverse Leakage @ Vr | 83 µA |
| Diode Configuration | 1 Pair Common Cathode |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Speed | 500 ns, 200 mA |
| Supplier Device Package | PG-TO247-3 |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 1.2 kV |
| Voltage - Forward (Vf) (Max) @ If [Max] | 1.65 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IDW20G120 Series
CoolSiC™ Schottky diodegeneration 5 1200 V, 20 A in a TO-247-3 package presents a leading edge technology for SiC Schottky Barrier diodes. The thin wafer technology, already introduced with G2, is combined with a merged pn junction improving diode surge current capabilities. The result is a series of products delivering market leading efficiency and more system reliability at an attractive cost point.
Documents
Technical documentation and resources